<title>Temperature dependence of energy bandgap of Zn<formula><inf><roman>1-x</roman></inf></formula>Mg<formula><inf><roman>x</roman></inf></formula>Se strained epitaxial layers grown on GaAs</title>

Abstract

Using non-destructive optical methods we determined the bandgap energies for strained epitaxial layers of Zn<SUB>1-x</SUB>Mg<SUB>x</SUB>Se on GaAs. Molecular beam epitaxy method for growing the samples with different magnesium concentrations has been used. We compared experimental results with equation based on the Hill's theory, which describes the theoretical bandgap changes with composition z for ternary alloy. The nonlinear dependence of energy bandgap on composition is expressed by bowing parameter. The temperature dependence of bandgap energy in the range from 10 K up to the room temperature was also investigated. Semiempirical Varshni's formula to describe this dependence has been used.