Abstract

 High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconductor material used to fabricate these devices either directly or indirectly. Different models have been widely used to analyze the band-gap energy dependent characteristics at different temperatures. The most commonly used methods to analyze the temperature dependence of band-gap energy of semiconductor materials are: Passler model, Bose–Einstein model and Varshni’s model. This paper is going to report the limitation of the Bose–Einstein model through a comparative analysis between Bose–Einstein model and Varshni’s model. The numerical analysis is carried out considering GaN as it is one of the most widely used semiconductor materials all over the world. From the numerical results it is ascertained that below the temperature of 95o K both the models show almost same characteristics. However beyond 95o K Varshni’s model shows weaker temperature dependence than that of Bose–Einstein model. Varshni’s model shows that the band-gap energy of GaN at 300o K is found to be 3.43eV, which establishes a good agreement with the theoretically calculated band-gap energy of GaN for operating at room temperature.
Highlights
High temperature stability of the band-gap energy of semiconductor materials beyond room temperature is one of the most significant properties to be considered
In this paper, we are going to focus on a comparative analysis of the effect of temperature on the band-gap energy of GaN and its stability beyond room temperature using the well-known Bose–Einstein model and Varshni’s model
The energy band-gap of semiconductor materials is determined effectively by the temperature dependence of electron-phonon interactions due to the following reasons: (i) the band-gap reveals the bond energy, (ii) a rise in atmospheric temperature changes the chemical bonding as electrons are promoted to conduction band (CB) from valence band (VB)
Summary
High temperature stability of the band-gap energy of semiconductor materials beyond room temperature is one of the most significant properties to be considered. A lot of methods have been applied to investigate the temperature dependence of the band-gap energy of semiconductor materials Those include: the two-oscillator model by Passler, Bose–Einstein model, and Varshni’s model [2,3,4,5]. These models are widely applied to analyze the effect of temperature on the band-gap energy of semiconductor materials for applications in optoelectronic devices like lasers, solar cells, and so on. Group III–V nitride alloys are under extensive investigation in the field of semiconductor device design These materials are widely used in order to design high performance semiconductor optoelectronic devices with lower temperature sensitivity. In this paper, we are going to focus on a comparative analysis of the effect of temperature on the band-gap energy of GaN and its stability beyond room temperature using the well-known Bose–Einstein model and Varshni’s model
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
