Abstract
Vanadium dioxide (VO2) exhibits a phase-change behavior from the insulating state to the metallic state around 340 K. By using this effect, we experimentally demonstrate a radiative thermal rectifier in the far-field regime with a thin film VO2 deposited on the silicon wafer. A rectification contrast ratio as large as two is accurately obtained by utilizing a one-dimensional steady-state heat flux measurement system. We develop a theoretical model of the thermal rectifier with optical responses of the materials retrieved from the measured mid-infrared reflection spectra, which is cross-checked with experimentally measured heat flux. Furthermore, we tune the operating temperatures by doping the VO2 film with tungsten (W). These results open up prospects in the fields of thermal management and thermal information processing.
Published Version
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