Abstract
The absorption coefficient of HgCdTe structures grown by the methods of liquid-phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD) is studied and calculated. The experimental data are compared to a theoretical absorption spectrum model, which is based on the fundamental absorption effect and the general theory of direct interband optical transitions, as well as other empirical dependences. The Fermi level shift in the studied HgCdTe structures and the slope of experimental absorption characteristics are calculated.
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