Abstract
The anomalous Hall effect is measured InSb at low temperature. In this nonmagnetic semiconductor the polarization of the conduction electrons is obtained by application of an external magnetic field ${B}_{0}$. The spin-dependent Hall effect is separated from the much larger ordinary Hall effect by magnetic resonance of the conduction electrons. Two physical mechanisms responsible for the anomalous Hall effect are separated and the experimental results agree within a factor of 2 with the theoretical predictions without any adjustable parameter.
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