Abstract
We have investigated the relationship of the boron-oxygen (B-O) complexes to the staggered oxygen dimers (O2ist) in silicon. It is found that the saturated concentration of B-O complexes (Nt*) is proportional to the O2ist concentration ([O2ist]) in Czochralski silicon samples, whose [O2ist] are varied by annealing at different temperatures. This proportionality is further confirmed in a special silicon ingot with variable oxygen and carbon concentrations, in which the Nt* and [O2ist] show the similar dependences on the interstitial oxygen concentration. Therefore, our experimental data support that the O2ist should be an ingredient of the light-induced defects in silicon.
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