Abstract
The influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon is studied by deep level transient spectroscopy (DLTS), correlated with photoluminescence (PL) analyses. N + p silicon diodes with interstitial oxygen content between 10 16 cm −3 and 10 18 cm −3 and carbon content below 10 16 cm −3 , are irradiated by 2 MeV electrons with fluences ranging from 5 × 10 14 cm −2 to 10 16 cm −2 . The DLTS spectra reveal two hole traps characterised by an activation energy of respectively 0.19 eV and 0.36 eV. Correlation with PL measurements confirmed the association of the 0.36 eV level with a C i O i and/or C i C s complex. Isothermal anneals performed at 200 °C resulted in a gradual conversion of the E v +0.19 eV to a defect level at E v +0.24 eV. From the oxygen content dependence of the transformation it is suggested that the divacancy diffuses and is trapped by interstitial oxygen forming a V 2 O complex.
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