Abstract
We have completed a Series of CO60 and 8 and 25 MeV proton irradiations of wafer test structures and complete CCD detectors in order to study the changes in threshold voltage, dark current and charge transfer inefficiency (err) of CCD devices with very fast frame readout rates and large pixel geometries. Significant threshold voltage shifts for floating difhsion some followex amplifiers were observed. Changes in dark current were observed for both accumulation mode and depletion mode openition. Some evidence of source follower amplifier breakdown was seen following proton irradiation. Causes are unresolved. CTI changes of less than 0.01% were observed from the proton irradiation.
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