Abstract
The author reviews the results of recent Co/sup 60/ and proton testing of TH7863 and THX31160-1 CCDs. The Co/sup 60/ gamma ray tests were performed on devices both biased and unbiased during irradiation and at two dose rates (1 krad/hr and 50 rad/hr). In all cases the biased devices showed a threshold voltage shift of approximately 0.09 V/krad and significant increases in surface dark current ( approximately 10nA/cm/sup 2//krad at 22 degrees C) which continued after irradiation had ceased. Both threshold voltage and dark current damage were reduced for unbiased devices. Power consumption, charge transfer efficiency (CTE), full well capacity and charge to voltage conversion factor were also measured but did not show large changes. Proton testing was carried out at 1.5 and 10 MeV again for biased and unbiased devices and dark current changes due to bulk damage were observed. These were bias independent. There was significant annealing of bulk damage after 3 months storage (this time the dark current reduced). After annealing a storage constant of roughly 2.4nA/cm/sup 2/ per MeV of damage energy at 22 degrees C was found. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
