Abstract
InSb photodiodes were examined for performance degradation after pulsed laser illumination at 0.532 micron and 1.064 micron. Incident laser powers ranged from 6 x 10 exp-18 micron-watts to 16 micron-watts in a 50 pm diameter spot. Dark current and spectral response were both measured before and after illumination. Dark current measurements were taken with the diode blanked off and viewing only 77 K surfaces. Long term stability tests demonstrated that the blackbody did not exhibit long term drifts. Other tests showed that room temperature variations did not affect the diode signal chain or the digitization electronics used in data acquisition. Results of the experiment show that the diodes did not exhibit changes in dark current or spectral response performance as a result of the laser illumination. A typical change in diode spectral response (before/after laser exposure) was about 0.2 percent +/- 0.2 percent.
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