Abstract
The influence of the rare-earth oxide (Yb2O3) on arsenic selenide (AseSe) host is currently investigatedand documented in this study. Nanocomposite films were grown using the electrodeposition (ED)technique with the addition of 1 e 4 mol% Yb2O3. The film’s optical structural, optical, morphological,and electronic features were studied. The host matrix presents the monoclinic structure whereas thecomposite films present two phases ecubic and orthorhombic crystal structure. Crystallites within nanosizes (36.2 nm) were recorded for the pristine film while the composite films showed sizes ranging from37.2 to 48.1 nm. Moreover, the Raman spectra revealed low energy Raman phonons characteristic of Se8rings, As4Se4 cages, AseSe hetero-polar bonds whose cleavage was due to the diffusion of the Yb ionsinto the host matrix as shown by the Raman shift. More so, the refractive index peaked at n ¼ 2.66 in thel interval of 350e600 nm, while the SEM images showed nano-balls and nanoclusters which are fairlyhomogeneous. PL studies exhibited multimode emission bands spanning the UVeViseNIR regions. Firstprinciplescalculations were employed to investigate the structural properties and electronic structure ofthe pristine (AseSe) film, as well as Yb contribution. It was found that Yb addition leads to reduce thebandgap energy and consequently the lone pair p-states of Se contribute nearby to Fermi energy level.Hence, the experimental and theoretical results of films afford potential applications in phase-changememory (PCM) and downconverting solar cell window layer.
Published Version
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