Abstract
Improvements in III-nitride technology continue apace in both opto- and microelectronic device performance as well as in lifetimes and stability, with 2005 being no exception. Similar improvements are occurring in parallel in their related fields of application, while the work of Shuji Nakamura and colleagues at UCSB on non-polar and semi-polar GaN facets merits separate coverage and could allow LEDs to leap ahead in efficiency into new markets.
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