Abstract
The technique of exfoliation of II-VI epitaxial layers was developed and applied for structures with CdTe/ZnTe quantum dots, some of them containing single manganese ion. Our demonstration is based on molecular beam epitaxy growth of CdTe, MgTe, and ZnTe buffers on GaAs (100) substrate. Exfoliation was realized thanks to MgTe degradation in water. This allowed to achieve over 1mm2 large, free-standing zinc-blende crystalline structures based on ZnTe, transparent for wavelength over 540nm. The sample exhibit interferences characteristic for a thin film with a thickness of 1.8 µm as anticipated. At low temperature, we observed also sharp photoluminescence lines of quantum dots in the spectral range 540 - 610 nm. The developed technique may be used in the future to investigate transmission through epitaxial structures based on II-IV semiconductors i.e. microcavities, quantum wells, quantum dots or diluted magnetic semiconductors.
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