Abstract
We have investigated the exciton spin relaxation mechanism between 13 and 300K in InGaAs∕InP quantum wells using time-resolved spin-dependent pump and probe absorption measurements. The exciton spin relaxation time, τs above 40K was found to depend on temperature, T, according to τs∝T−1.1, although the spin relaxation time is constant below 40K. The clear carrier density dependence of the exciton spin relaxation time was observed below 40K, although the carrier density dependence is weak above 40K. These results imply that the main spin relaxation mechanism above and below 40K are the D’yakonov–Perel’ process and the Bir–Aronov–Pikus process, respectively.
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