Abstract
AbstractWe report photoluminescence and reflectivity measurements of MgxZnyCd1−x−ySe epitaxial layers (0 < x < 0.53) grown by molecular beam epitaxy on InP (100) substrates. Significant emission line broadening, increase in activation energy and Stokes shift are monitored with increasing Mg content. For MgxCdyZn1−x−ySe samples with large Mg content (x > 0.3), we observe an anomalous temperature dependence of both the emission energy and line broadening. This behavior is assigned to the emission from localized states. Different mechanisms of carrier localization are discussed and exciton localization on statistical CdSe clusters is proposed to be the most likely one. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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