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Abstract
Conduction and valence band offsets in ZnTe1-xSx/ZnS strained-layer superlattices (SLSs) are calculated as a function of sulfur (S) concentration (x). The valence band offsets markedly decreases with increasing x because the energy difference between the band gaps ZnS and ZnTe1-xSx decreases with increasing x. Exciton binding energy in the ZnTe1-xSx/ZnS SLSs decreases with increasing ZnTe1-xSx and ZnS layer thickness. This system has two exciton systems under an applied electric field. The energy splitting of the exciton systems increases with increasing electric field strength.
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