Exciton binding energy in GaAsBiN spherical quantum dot heterostructures

Abstract

The ground state exciton binding energies (EBE) of heavy hole excitons in GaAs1-x-yBixNy – GaAs spherical quantum dots (QD) are calculated using a variational approach under 1s hydrogenic wavefunctions within the framework of effective mass approximation. Both the nitrogen and the bismuth content in the material are found to affect the binding energy, in particular for larger nitrogen content and lower dot radii. Calculations also show that the ground state exciton binding energies of heavy holes increase more at smaller dot sizes as compared to that for the light hole excitons.