Abstract
In this paper, the crystal morphology and grain size evolution of Ge–Sb–Te (GST) irradiated by multi-pulsed picosecond (ps) laser were characterized by transmission electron microscopy and selected area electron diffraction. Morphologies induced by multi-pulsed laser were radially quasiperiodic structures, and the crystallization area induced by the first laser pulse acted as the periodic repeated unit. Single laser pulse irradiation produced three different conterminal annular crystallization zones, and their formation mechanisms were discussed. GST films accumulated thermal and structural change induced by per laser pulse, reducing crystallization threshold and extending crystallization fluence range. Sequentially, every subsequent laser pulse created a new crystallization area, and then accumulated to be a pulse number dependence radially quasiperiodic structure. Meanwhile, the laser pulse train dramatically refined grains. The grain boundaries are presented as an alternating-layered structure or atomic ordering domain. The present study revealed microstructure evolution of intermediate states for multi-level storage and realized multi-phase changes and is critical to enhance storage density.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
