Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique

Abstract

In LEC-grown GaAs:S, two vibrational absorption lines are measured at 2382.2 and $2392.8\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$ $(T=7\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ and assigned to $^{11}\mathrm{B}\ensuremath{-}\mathrm{H}$ and $^{10}\mathrm{B}\ensuremath{-}\mathrm{H}$ stretching modes. Uniaxial stress experiments reveal that the symmetry of the responsible complex is ${C}_{s}$. Bond strength considerations suggest that this complex is a ${\mathrm{S}}_{\mathrm{As}}\ensuremath{-}{\mathrm{B}}_{\mathrm{Ga}}$ pair passivated by hydrogen bonded to boron. The constituents of this $\mathrm{S}\ensuremath{-}\mathrm{B}\ensuremath{-}\mathrm{H}$ complex are located within a {110} plane.