Abstract
The amplitudes of the Shubnikov—de Haas conductivity minima are analysed for n-type inversion layers in Si 〈100〉 MOS devices. Thermal excitation between adjacent Landau levels, conduction through extended tail states and activated conduction from localised tail states are all detected in different magnetic field and temperature ranges. The minimum metallic conductivity found for the lowest spin extremum agrees well with theory but the values for higher Landau levels are lower than expected.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have