Abstract
We have investigated the spectral noise intensity of the Hall voltage and the Shubnikov-de Haas voltage of a GaAs/Al xGa 1−xAs (x = 0.34) heterostructure operating under quantum Hall conditions. In the spectra three contributions could be distinguished: white noise, which was independent of the current through the device, and two Lorentzians having a quadratic current dependence. The white noise component is associated with thermal noise, whereas the Lorentzians can be interpreted in terms of generation-recombination processes involving transitions of electrons between extended and localized states in the center of a Landau level and in the Landau level tails respectively. The dependence on magnetic field and electron density of the low frequency plateaus as well as the characteristics time of both Lorentizians is in agreement with calculations based on a localization model. Fluctuations in the number of extended electrons were calculated from an analytic formulation of the model as well as by means of Monte Carlo simulations.
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