Evidence for an additional noise source modifying conventional 1/f frequency dependence in sub-μm metal–oxide–semiconductor field-effect transistors

Abstract

Flicker noise measurements for n-metal–oxide–semiconductor field-effect transistors have been carried out under a wide range of bias conditions. The experiments show excess noise over an ideal 1/f noise spectrum at around 1–10 kHz frequency range, which is independent of the drain voltage. The origin of the additional noise is the Shockley–Read–Hall generation–recombination process occurring near the drain in the channel. Monte Carlo device simulations confirmed the excess noise origin as well as the observed reduction of its magnitude with increasing gate voltage.