Abstract
In this paper, the low-frequency excess noise due to the kink effect in deep submicron unibond N-metal oxide semiconductor field effect transistor (N-MOSFETs) is investigated. Drain current power spectral density measurements are performed for partially and moderately fully depleted and body-tied devices. The behavior of this effect with the frequency is thoroughly analysed and the control of such a noise overshoot by applying a back-gate voltage is also demonstrated and discussed. A comparison between unibond and SIMOX technologies, in terms of noise behavior, is presented. Finally, the impact of the body contact on the noise is also shown.
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