Evaporated thin silicon interlayers for indium phosphide device applications

Abstract

The use of thin silicon films for indium phosphide device applications was investigated. Devices prepared with the silicon interlayers show a decrease in hysteresis, flat band voltage shift, and interface state density. Angular resolved X-ray photoelectron spectroscopy studies of the silicon-indium phosphide interface indicate that these effects are due to the interaction of the silicon with the native oxide of indium phosphide prior to dielectric deposition. >