Evaluations of Scaling Properties for Ge on Insulator MOSFETs in Nano-Scale

Abstract

Germanium metal-oxide-semiconductor field-effect transistors (MOSFETs) have attracted tremendous attention due to the high carrier mobility especially in the low-field. Compared to Si, in bulk germanium the velocity would saturate at a lower field with a lower saturation velocity. Thus the scaling behavior of germanium MOSFET with gate length in nano-scale is very important. In this work, characteristics of both n- and p-channel germanium on Insulator (GOI) MOSFETs with channel length (Lch) ranging from 20 nm to 130 nm are simulated by 2D self-consistent full-band Monte Carlo device simulator to investigate the scaling properties. The results indicate that both for n and p channel GOI MOSFETs have favorable scaling properties in nano-scale due to the non-stationary transport near source side especially for p channel device. But the surface roughness scattering is a critical issue that might suppress the non-stationary transport. Short channel effect (SCE) is serious in GOI devices and much thinner Germanium layer have to use to optimize the performance.