Abstract
The S-parameters of discrete silicon bipolar microwave transistors have been measured at various collector-emitter voltages above and below the collector-emitter breakdown voltage (typically referred to as BV/sub ce0/) in order to verify the influence of avalanche multiplication on the small-signal parameters (such as f/sub t/ and f/sub max/). It was found that the small-signal device parameters are not adversely affected even when the DC characteristics deviate from the nominal behavior. The existing models for f/sub t/ and f/sub max/ are therefore valid provided that the operating point is accurately defined. >
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