Abstract
This paper deals with the effects of <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sup> Co gamma irradiation on punch-through commercial insulated gate bipolar transistors turn-off switching behavior. The response of the threshold voltage, the gate-emitter leakage current, the collector leakage current, the collector-emitter breakdown voltage and the turn-off switching parameters under three different in situ gate biases are described. Charge trapping in the gate oxide causes the decrease of the threshold voltage. It is shown that the decrease of this parameter and the modifications in the Miller plateau level and width result in an increase of the turn-off delay time, the collector current fall-time, the collector-emitter voltage rise-time, and consequently an increase of the turn-off switching losses and a decrease of the turn-off overshoot collector-emitter voltage.
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