Abstract
A metal–oxide–semiconductor (MOS) capacitor was fabricated using Pt and a 6H–SiC substrate, and the interface state was evaluated in oxygen and hydrogen ambients under high-temperature conditions by the AC conductance technique. The relationship among interface state density (Dit), time constant (τit) and energy level (Ec-Et) was obtained. The atmosphere was repeatedly changed between hydrogen and oxygen. Some levels of a narrow region near the conduction band, levels near 0.4 eV, and levels of a wide region near the band center were observed. Dit in the deeper levels increases in O2 atmosphere and an increase in τit accompanies it. In H2 atmosphere, Dit in the deeper wide energy region near the band center decreases. This change is almost reversible. In the range of 300–500°C, the Dit near the band center in O2 atmosphere increases with temperature.
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