Radiation damage of thermally oxidized MOS capacitors

Abstract

The influence of preparation parameters and the effect of X-rays (150 keV, 104rad (Si)) on oxide charge Q ox and interface state density N ss in thermally oxidized MOS varactors under different biasing conditions during irradiation has been investigated. The interface state density was determined by the ac conductance method before and after irradiation. The oxide charge has been evaluated with regard to the charge Q ss of the interface states. Q ss has beeu discussed with the aid of simple models concerning the energetic distribution and recharge character of the interface states. The results indicate a similar dependence between flatband voltage, interface state density, and normalized oxide charge density as a function of gate bias during irradiation. Furthermore, the so-called oxidation triangle of oxide charge before irradiation exists for interface states as well. Calculations on the basis of the Schottky barrier model of the irradiated MOS structure show that the radiation-induced charge exists at both interfaces in the oxide layer. Radiation tolerance of the MOS capacitors as a function of technological parameters is discussed.