Abstract
Two combined impedance methods, developed for solid state MOS (Metal Oxide Semiconductor) devices, are used to check the electrical properties of home-made EOS (Electrolyte Oxide Semiconductor) systems. This set-up, fitted with a three-electrode monitoring system, allows both the quasi-static capacitance and the ac conductance of wet heterostructures to be measured. The two sets of data, which complement each other perfectly, show that for oxidized silicon EOS devices, the pH has an extremely small and erratic influence on the Si/SiO 2 interface state density. This result confirms that the sensitive dielectric interface in such pH sensors is the SiO 2/electrolyte interface.
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