Evaluating NBTI and HCI effects on device reliability for high-performance applications in advanced CMOS technologies

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The integrated circuit (IC) industry faces significant reliability challenges as MOSFET devices age, particularly at advanced nodes. Key degradation mechanisms include hot-carrier injection (HCI), negative-bias temperature instability (NBTI), and positive-bias temperature instability (PBTI), affecting both PMOS and NMOS transistors. These aging effects alter critical parameters like drain current and threshold voltage, reducing device lifespan. This paper introduces a comprehensive aging framework for MOSFETs, accounting for PBTI, NBTI, and HCI with a focus on partial recovery in AC operations at advanced technology node of 22 nm. A machine learning model enhances feature extraction, while the MOSRA approach accelerates SPICE simulations to optimize yield and reliability.