Abstract
Gas cluster ion beam (GCIB) processing has recently been introduced as a commercial tool for processing ‘rough’ surfaces, such as polished substrates or thin films. The physical interaction of a gas cluster ion beam with a surface is strikingly different from that of better-known ‘monomer’ ion beams. Clusters are formed by the adiabatic expansion of gas through a nozzle, ionization by electron impact, acceleration, and then impingement upon the surface to be processed. The physics of the surface interaction of the cluster beam strongly depends upon gas composition, cluster size, cluster size distribution, and beam energy. Typical argon GCIBs are composed of clusters ranging from several hundred to several thousand atoms in size. It has been previously shown that Ar clusters can be used to smooth surfaces at a sub-nanometer level. Argon cluster beam smoothing typically occurs in the energy range between 15 and ∼30 keV. As such, the average energy per atom is of the order of 10 eV/atom upon cluster impact with the surface and subsequent dissociation. Ion cluster beams formed with reactive gases such as oxygen and nitrogen can also be formed, but at somewhat lower current densities than those obtainable with argon. Upon impact, reactive gas clusters undergo strong chemical reactions at the substrate surface. An extension of this chemical interaction is to utilize reactive clusters in an ion beam-assisted, thin-film physical vapor deposition process. This has been demonstrated with relatively low energy (E<∼10 keV) oxygen clusters in an electron-beam evaporator to form extremely low resistivity indium–tin oxide films on room-temperature substrates. This paper will describe the basics of GCIB formation and application to atomic scale smoothing of technologically interesting substrates and thin films, as well as reactive GCIB assisted deposition technology. The results presented demonstrate some of the unique physics and materials science that can be achieved with an emerging GCIB technology.
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