Abstract

Gas cluster ion beam (GCIB) process is applied for surface smoothing of one dimensional photonic band gap structure. After argon GCIB irradiations, hillocks on the Si3N4 surface were preferentially removed and smooth surface was realized. Reflectance spectra of PBG structure after Ar-GCIB irradiation was much closer to that of the theoretical line than that of the as-deposited sample. GCIB process will be a candidate for precise pattern formation which is required for Si micro photonics.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call