Abstract
An investigation of the (BTO) thin-film etch characteristics and mechanism in the inductively coupled plasma was carried out. The BTO etch rate as well as the BTO/Pt etch selectivity were measured as functions of mixing ratio , gas pressure , input power , and bias power . A combination of plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling provided the information on plasma parameters, gas-phase compositions, and fluxes of active species on the etched surface. It was found that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, when the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low volatile reaction products.
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