Abstract
This paper investigates the mechanism of the plasma etch induced sidewall damage (carbon depletion, moisture uptake, silanol formation) of porous low-k methyl silsesquioxane (MSQ, k=2.2) films. Etch induced damage was characterized on both blanket and trench patterned MSQ materials. The MSQ materials were etched with CF4 and C4F8-based chemistries under various process conditions. Simple CF4∕O2 chemistry minimized the damage of porous MSQ during plasma etching. The addition of Ar or H2 increased the damage. The highest damage levels were observed with simultaneous Ar, H2, and N2 addition. Also, the use of higher powers and/or higher pressures resulted in more etch induced damage.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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