New measurement technique of pore size distribution of porous low-k film

S Kawamura,K Maekawa,T Ohta,T Ohdaira,K Omote,K Suzuki,R Suzuki,M Tachibana

doi:10.1109/iitc.2001.930058

New measurement technique of pore size distribution of porous low-k film

S Kawamura, K Maekawa + Show 6 more

https://doi.org/10.1109/iitc.2001.930058

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Publication Date: Jan 1, 2001

Citations: 1

Affiliation: Tokyo Electron (Japan), University of Electro-Communications, Seikagaku Corporation (Japan), Rigaku (Japan)

#Porous Methyl Silses Quioxane #Tungsten Chemical Vapor Deposition + Show 8 more

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Abstract

We developed a new simple X-ray scattering method for determining the pore size distribution in porous low-k film on silicon substrate without the destruction of the low-k film. We succeeded to observe the tungsten in porous MSQ (Methyl Silses Quioxane) film by TEM after the filling of tungsten into the pores by tungsten chemical vapor deposition (CVD). Furthermore, we compared this Small Angle X-ray Scattering (SAXS) and Gas Adsorption (GA) and Positron Annihilation Lifetime Spectroscopy (PALS).

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