Abstract
We present some of the ion beam and etch characteristics of a broad-beam electron cyclotron resonance (ECR) ion source. The source offers two modes of operations suitable for uniform ion beam etching. The low energy mode, 25<E<200 eV, is characterized by 0.30–1 mA/cm2 ion density with the beam uniformity, within ±5%, spanning over 10 cm of the beam diameter. Argon beam etching of gold and aluminum targets give etch rates of 349–2183 Å/min and 277–834 Å/min for each material, respectively. A preliminary reactive ion beam etching of aluminum targets with Cl2 indicates an increase in the etching rates by factors of 1.5 to 2 over argon ion beam etching.
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