Abstract
In this paper influence of lattice strains, bending and doping on the energy gap width in the InAs1−xSbx structures was determined numerically. Due to this fact, by energy gap measurements (e.g. from photoluminescence, or photo conductance) we can determine the amount of lattice strain. The experimental results of other researchers were used in the work to verify our theoretical estimates. Lattice stress resulting from lattice mismatch between the substrate and the epitaxial layer and bending of the heterostructure is partially relaxed by misfit dislocations forming matrixes in the interfaces' areas. Average distances between dislocation lines in individual interfaces were calculated from the condition of minimum elastic energy, taking into account interaction of stress fields and strains caused by lattice misfit, bending and presence of dislocations. Doping influence on the band gap width change (band gap narrowing effect) is insignificant in comparison to the influence of lattice mismatch and generated dislocations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
