Abstract
Using our own computer program, we determined the spatial distribution of lattice strains in the HgCdTe heterostructure grown on a GaAs substrate. Lattice stress resulting from lattice mismatch between the substrate and the epitaxial layer and bending of the heterostructure is almost completely relaxed by misfit dislocations forming matrixes in the interfaces’ areas. The average distances between dislocation lines in individual interfaces were calculated based on the minimum energy, i.e. elastic energy condition resulting from the interaction of stress fields and deformations caused by lattice misfit, bending and the presence of dislocation plus electrical energy of dislocations.
Highlights
Earlier, the basic research was focused on the growth, doping and characterization of MCT on lattice matched CdZnTe substrates because the highest crystal perfection is realized just for this material conjugation
I our previous work (Jóźwikowska et al 2019) we presented how to calculate pseudomorphic lattice strains in InAsSb heterostructures and deformations caused by bending the structure
Using our own computer program, we calculated lattice strains, and deter‐ mined if there are pseudomorphic strains which give the same value of the lattice constant a∥ in the plane of layers growth in all structure
Summary
The basic research was focused on the growth, doping and characterization of MCT on lattice matched CdZnTe substrates because the highest crystal perfection is realized just for this material conjugation. Keywords CdHgTe heterostructures · Lattice strain · Bending · Misfit dislocations I our previous work (Jóźwikowska et al 2019) we presented how to calculate pseudomorphic lattice strains in InAsSb heterostructures and deformations caused by bending the structure.
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