Abstract
Mobility of carriers at the organic/insulator interface is crucial to the performance of organic thin film transistors. The present work describes estimation of mobility using admittance measurements performed on an asymmetric capacitive test structure. Besides the advantage of simplicity, it is shown that at low frequencies, the measured capacitance comes from a large area of channel making the capacitance-voltage characteristics insensitive to contact resistances. 2-D numerical simulation and experimental results obtained with Pentacene/Poly(4-vinyphenol) system are presented to illustrate the operation and advantages of the proposed technique.
Highlights
Mobility of carriers at the organic/insulator interface is crucial to the performance of organic thin film transistors
Besides the advantage of simplicity, it is shown that at low frequencies, the measured capacitance comes from a large area of channel making the capacitance-voltage characteristics insensitive to contact resistances. 2-D numerical simulation and experimental results obtained with Pentacene/Poly(4-vinyphenol) system are presented to illustrate the operation and advantages of the proposed technique
Channel mobility is one of the most important parameters that determines the ON state current and switching speed/frequency response of transistors. It is commonly estimated from steady state current-voltage (I − V) measurements performed on thin film transistors
Summary
Mobility of carriers at the organic/insulator interface is crucial to the performance of organic thin film transistors. Estimation of carrier mobility at organic semiconductor/insulator interface using an asymmetric capacitive test structure Agarwal,[1,2] and Baquer Mazhari1,2,a 1National Centre for Flexible Electronics, IIT Kanpur, 208016, Uttar Pradesh, India 2Department of Electrical Engineering, IIT Kanpur, 208016, Uttar Pradesh, India (Received 7 March 2016; accepted 18 April 2016; published online 26 April 2016)
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