Abstract
An electrostatic discharge (ESD) protection design is proposed to solve the ESD protection challenge to the analog pins: for high-frequency or current-mode applications, By including an efficient power-rails clamp circuit in the analog input/output (I/O) pin, the device dimension (W/L) of an ESD clamp device connected to the I/O pad in the analog ESD protection circuit can be reduced to only 50/0.5 (/spl mu/m//spl mu/m) in a 0.35-/spl mu/m silicided CMOS process, but it can sustain the human body model (HBM) and machine model (MM) ESD level of up to 6 kV (400 V). With such a smaller device dimension, the input capacitance of this analog ESD protection circuit can be significantly reduced to only /spl sim/1.0 pF (including the bond-pad capacitance) for high-frequency applications.
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