Equivalent circuits for transients in p- n junctions and solar cells with their application to methods for minority carrier life-time measurements

Abstract

Equivalent circuits corresponding to series solutions obtainable under various operating conditions of p- n junctions and solar cells are given. These circuits are directly applicable to the small signal impedance measurements. The transient behaviour of the p- n junction devices during minority carrier lifetime determination experiments has also been explained successfully with the help of these circuits. This provides a better insight towards the physical processes involved in these methods and interpretation of the various experimental results becomes easier.