Abstract
In this letter we report the first observation by EPR of helium-associated defects in solid. Two new ( S = 1) EPR spectra, labeled Si-AA5 and Si-AA6, arise from the association of helium and intrinsic defects in crystalline silicon. Both are produced by helium ion implantation at room temperature and are stable to 180°C. By implanting 3He isotope, the Si-AA6 3He hyperfine spectrum has been observed. Both centers are tentatively identified as vacancy-helium centers in neutral charge states.
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