Abstract
We have studied intrinsic point defects in crystalline silicon via a tight-binding molecular-dynamics scheme. The intrinsic defects studied in this work are the vacancy, the interstitial, the divacancy, the split divacancy, and the vacancy-interstitial complex. Fully relaxed geometries, gap states, and formation energies are investigated. It is shown that the relaxation effects cannot be neglected, in particular, in the peak position of band-gap states
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
