Abstract
The epitaxial relationships of \ensuremath{\beta}-${\mathrm{FeSi}}_{2}$ films grown on Si(111) by solid-phase epitaxy and reactive-deposition epitaxy were investigated by x-ray diffraction. The \ensuremath{\beta}(101) and \ensuremath{\beta}(110) epitaxies were unambiguously detected by use of the \ensuremath{\beta} space-group extinction rules. Three orientations, as expected from the Si bulk 3m symmetry, are developed in equal proportions. They can be related to a B-type fluoritelike epitaxy. Intensity profiles around Bragg nodes proved the intrinsic presence of \ensuremath{\beta}(100) [011]/2 stacking faults. An electron-microscopy analysis has pointed out the role of the \ensuremath{\beta}(100) orientation in the growth mechanism. An additional orientation was equally revealed which concerns \ensuremath{\beta} islands with (001) [or (010)] facets parallel to inward Si(110) planes.
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