Abstract
The electronic structure and chemical states of the overlayer and substrate in epitaxially grown Co films on Se-treated GaAs(001) 2×1 are investigated by photoemission spectroscopy (PES) using synchrotron radiation. Adatom (Co)-substrate (Ga) intermixing is found at the initial stages of Co deposition. The intermixed layer is then buried and epitaxial growth is achieved following further deposition. During the intermixing, Se is floated over the surface of Co overlayers. A small amount of As-segregation is also observed in the thicker Co films.
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