Abstract
We discuss a new method for low temperature epitaxial growth of silicon films by gas-jet electron beam plasma chemical vapor deposition in SiH 4 –Ar mixture. The growth rate up to 0.8 μm/min becomes possible at the substrate temperature below 650 °C, without using ultra-high vacuum chamber. Epitaxial Si films were deposited with the thickness up to 2–10 μm. The structure of the films has been studied after deposition by transmission electron microscopy , transmission high energy electron diffraction and reflection high energy electron diffraction . All films were of epitaxial types, but they were characterized by a high density of threading dislocations (≈10 7 cm −2 ).
Published Version
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