Abstract
Pd2Si films were grown epitaxially onto Si(111) substrates by scanning electron-beam annealing of deposited Pd films. Single phase silicide formation and epitaxial growth were studied by Nomarski optical microscopy, x-ray diffraction analysis, and Rutherford backscattering and channeling techniques. The crystalline quality of the electron-beam-annealed Pd2Si films was weakly dependent on annealing conditions and somewhat worse than that of furnace-annealed films.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
