Abstract
ABSTRACTEpitaxial growth of Pd2Si films on Si(lll) substrates by scanning cw electron beam annealing is investigated theoretically and experimentally. First, the nonlinear heat conduction equation is solved in a substrate with finite thickness to estimate the surface temperature during annealing. Then, the optimum growth conditions are experimentally determined, in which annealing parameters such as the beam current intensity, the scan speed, and the overlap width are changed. It has been shown by Rutherford backscattering and channeling techniques that the crystalline quality of the e-beam annealed Pd2Si films is somewhat worse than that of the furnace-annealed films.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
