Abstract
AbstractHigh quality, epitaxial growth of AlN and AlxGal-xN by OMVPE has been demonstrated on single-crystal AIN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [1010] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.
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